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FHP100N07: Unlocking the Power of High-Performance Power Transistors

Introduction

The FHP100N07 is a high-performance N-channel MOSFET from ON Semiconductor that stands out for its exceptional capabilities in power switching applications. This datasheet provides a comprehensive insight into the device's key features, electrical characteristics, and applications.

Key Features

  • High drain current: 100 A
  • Low on-state resistance: 0.007 Ω
  • Fast switching speed: τd
  • Rugged design and high reliability
  • Low thermal resistance: 0.11 °C/W
  • Lead-free and RoHS-compliant package: TO-220

Electrical Characteristics

Parameter Value Units
Drain-source voltage (Vds) 75 V
Drain-gate voltage (Vdg) 75 V
Drain current (Id) 100 A
On-state resistance (Ros) 0.007 mΩ Ω
Threshold voltage (Vth) 2.5 V
Gate-source threshold voltage (Vgs(th)) 3.5 V
Input capacitance (Ciss) 1,200 pF
Output capacitance (Coss) 480 pF
Reverse transfer capacitance (Crss) 80 pF

Applications

The FHP100N07 is widely used in a variety of high-power switching applications, such as:

  • Motor control
  • Power converters
  • UPS systems
  • Industrial automation
  • Automotive electronics

Packaging

The FHP100N07 is available in a TO-220 package, which is a three-terminal, non-isolated package with a molded plastic body. The device is lead-free and meets RoHS compliance standards.

fhp100n07 datrasheet

Design Considerations

When using the FHP100N07, it is important to consider the following design considerations:

  • Thermal management: Due to its high power handling capabilities, the FHP100N07 requires proper thermal management to ensure its reliability. A suitable heat sink or other cooling solution should be used.
  • Gate drive circuitry: The FHP100N07 requires a robust gate drive circuit with sufficient current drive capability. This is especially important for high-frequency switching applications.
  • Protection circuitry: Additional protection circuitry, such as over-voltage protection or over-current protection, may be necessary to protect the FHP100N07 from damage during operation.

Comparison with Other Similar Devices

Compared to other similar high-performance MOSFETs, the FHP100N07 offers the following advantages:

  • High drain current: 100 A, compared to 80 A or less for other devices
  • Low on-state resistance: 0.007 Ω, compared to 0.01 Ω or more for other devices
  • Fast switching speed: τd

Stories and Lessons Learned

  • Story 1: A motor control application required a high-power MOSFET with low on-state resistance and fast switching speed. The FHP100N07 was chosen for this application and provided excellent performance in terms of speed, efficiency, and reliability.
  • Lesson learned: The FHP100N07 is an ideal choice for applications that demand high power handling and fast switching.
  • Story 2: A power converter required a MOSFET with rugged design and high reliability. The FHP100N07 was selected for this application and met the required durability standards while delivering reliable switching performance.
  • Lesson learned: The FHP100N07 is a robust device that can withstand harsh operating conditions and provide consistent performance.
  • Story 3: An industrial automation application required a low thermal resistance MOSFET. The FHP100N07 was chosen for this application and dissipated heat effectively, ensuring its long-term reliability.
  • Lesson learned: The FHP100N07 is a well-suited device for applications that require both high power handling and low thermal resistance.

Effective Strategies

  • Use a heat sink: To ensure optimal performance and reliability, use an appropriate heat sink to effectively dissipate the heat generated by the FHP100N07.
  • Optimize the gate drive circuitry: Design the gate drive circuitry carefully to provide sufficient current drive capability and ensure clean and fast switching.
  • Consider protection circuitry: Implement necessary protection circuitry to safeguard the FHP100N07 from over-voltage, over-current, and other potential hazards.
  • Monitor operating conditions: Regularly monitor the operating conditions of the FHP100N07, including voltage, current, and temperature, to ensure proper functioning and early detection of any potential issues.

Tips and Tricks

  • Minimize loop inductance: Reduce loop inductance in the circuit layout to improve switching performance and reduce electromagnetic interference (EMI).
  • Use decoupling capacitors: Place decoupling capacitors near the FHP100N07 to minimize noise and improve signal integrity.
  • Test thoroughly: Conduct thorough testing in real-world conditions to verify the performance and reliability of the circuit design using the FHP100N07.

Pros and Cons

Pros:

FHP100N07: Unlocking the Power of High-Performance Power Transistors

  • High drain current and low on-state resistance for high power handling
  • Fast switching speed for efficient power conversion
  • Rugged design and high reliability for long-term performance
  • Lead-free and RoHS-compliant for environmental sustainability

Cons:

  • Requires proper thermal management due to high power handling
  • Needs a robust gate drive circuit with sufficient current capability
  • May require protection circuitry for over-voltage or over-current conditions

Conclusion

The FHP100N07 is a state-of-the-art power transistor that combines high performance with reliability and efficiency. Its exceptional characteristics and versatility make it the perfect choice for demanding power switching applications. By understanding the device's key features, electrical characteristics, and applications, engineers can optimize their designs to achieve maximum performance and system reliability.

Introduction

Time:2024-10-13 14:51:45 UTC

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